| Preparation of (In, Mn) As/(Ga, Al) Sb magnetic semiconductor heterostructures and their ferromagnetic characteristics H Munekata, A Zaslavsky, P Fumagalli, RJ Gambino Applied physics letters 63 (21), 2929-2931, 1993 | 247 | 1993 |
| Noise characteristics of double-barrier resonant-tunneling structures below 10 kHz YP Li, A Zaslavsky, DC Tsui, M Santos, M Shayegan Physical Review B 41 (12), 8388, 1990 | 202 | 1990 |
| Future Trends in Microelectronics: Frontiers and Innovations S Luryi, J Xu, A Zaslavsky John Wiley & Sons, 2013 | 195* | 2013 |
| Lateral interband tunneling transistor in silicon-on-insulator C Aydin, A Zaslavsky, S Luryi, S Cristoloveanu, D Mariolle, D Fraboulet, ... Applied Physics Letters 84 (10), 1780-1782, 2004 | 188 | 2004 |
| Resonant tunneling and intrinsic bistability in asymmetric double‐barrier heterostructures A Zaslavsky, VJ Goldman, DC Tsui, JE Cunningham Applied physics letters 53 (15), 1408-1410, 1988 | 173 | 1988 |
| A compact capacitor-less high-speed DRAM using field effect-controlled charge regeneration J Wan, C Le Royer, A Zaslavsky, S Cristoloveanu IEEE Electron Device Letters 33 (2), 179-181, 2011 | 147 | 2011 |
| A review of sharp-switching devices for ultra-low power applications S Cristoloveanu, J Wan, A Zaslavsky IEEE Journal of the Electron Devices Society 4 (5), 215-226, 2016 | 144 | 2016 |
| Tunneling FETs on SOI: Suppression of ambipolar leakage, low-frequency noise behavior, and modeling J Wan, C Le Royer, A Zaslavsky, S Cristoloveanu Solid-State Electronics 65, 226-233, 2011 | 141 | 2011 |
| Designing logic circuits for probabilistic computation in the presence of noise K Nepal, RI Bahar, J Mundy, WR Patterson, A Zaslavsky Proceedings of the 42nd Annual Design Automation Conference, 485-490, 2005 | 111 | 2005 |
| A tunneling field effect transistor model combining interband tunneling with channel transport J Wan, C Le Royer, A Zaslavsky, S Cristoloveanu Journal of Applied Physics 110 (10), 2011 | 105 | 2011 |
| Tunneling field-effect transistor with epitaxial junction in thin germanium-on-insulator D Kazazis, P Jannaty, A Zaslavsky, C Le Royer, C Tabone, L Clavelier, ... Applied Physics Letters 94 (26), 2009 | 101 | 2009 |
| Photonic band gap quantum well and quantum box structures: A high‐Q resonant cavity SY Lin, VM Hietala, SK Lyo, A Zaslavsky Applied Physics Letters 68 (23), 3233-3235, 1996 | 101 | 1996 |
| Finite element analysis of strain effects on electronic and transport properties in quantum dots and wires HT Johnson, LB Freund, CD Akyüz, A Zaslavsky Journal of applied physics 84 (7), 3714-3725, 1998 | 95 | 1998 |
| Reduction of reflection losses in ZnGeP2 using motheye antireflection surface relief structures C Aydin, A Zaslavsky, GJ Sonek, J Goldstein Applied Physics Letters 80 (13), 2242-2244, 2002 | 93 | 2002 |
| A feedback silicon-on-insulator steep switching device with gate-controlled carrier injection J Wan, S Cristoloveanu, C Le Royer, A Zaslavsky Solid-State Electronics 76, 109-111, 2012 | 81 | 2012 |
| A systematic study of the sharp-switching Z2-FET device: From mechanism to modeling and compact memory applications J Wan, C Le Royer, A Zaslavsky, S Cristoloveanu Solid-State Electronics 90, 2-11, 2013 | 78 | 2013 |
| Future trends in microelectronics: the nano millennium S Luryi, J Xu, A Zaslavsky (No Title), 2002 | 77* | 2002 |
| Progress in Z2-FET 1T-DRAM: Retention time, writing modes, selective array operation, and dual bit storage J Wan, C Le Royer, A Zaslavsky, S Cristoloveanu Solid-State Electronics 84, 147-154, 2013 | 76 | 2013 |
| High-efficiency silicon-compatible photodetectors based on Ge quantum dots S Cosentino, P Liu, ST Le, S Lee, D Paine, A Zaslavsky, D Pacifici, ... Applied Physics Letters 98 (22), 2011 | 75 | 2011 |
| Switching device based on first-order metal-insulator transition induced by external electric field F Chudnovskiy, S Luryi, B Spivak Future trends in microelectronics: the nano millennium 148, 2002 | 67 | 2002 |
