| Synthesis of wafer-scale uniform molybdenum disulfide films with control over the layer number using a gas phase sulfur precursor Y Lee, J Lee, H Bark, IK Oh, GH Ryu, Z Lee, H Kim, JH Cho, JH Ahn, ... Nanoscale 6 (5), 2821-2826, 2014 | 207 | 2014 |
| Hydrophobicity of rare earth oxides grown by atomic layer deposition IK Oh, K Kim, Z Lee, KY Ko, CW Lee, SJ Lee, JM Myung, ... Chemistry of Materials 27 (1), 148-156, 2015 | 149 | 2015 |
| Review of plasma-enhanced atomic layer deposition: Technical enabler of nanoscale device fabrication H Kim, IK Oh Japanese Journal of Applied Physics 53 (3S2), 03DA01, 2014 | 144 | 2014 |
| Area-selective atomic layer deposition using Si precursors as inhibitors R Khan, B Shong, BG Ko, JK Lee, H Lee, JY Park, IK Oh, SS Raya, ... Chemistry of Materials 30 (21), 7603-7610, 2018 | 115 | 2018 |
| Static and Dynamic Performance of Complementary Inverters Based on Nanosheet α-MoTe2 p-Channel and MoS2 n-Channel Transistors A Pezeshki, SH Hosseini Shokouh, PJ Jeon, I Shackery, JS Kim, IK Oh, ... Acs Nano 10 (1), 1118-1125, 2016 | 114 | 2016 |
| Reaction Mechanism of Area-Selective Atomic Layer Deposition for Al2O3 Nanopatterns S Seo, BC Yeo, SS Han, CM Yoon, JY Yang, J Yoon, C Yoo, H Kim, Y Lee, ... ACS applied materials & interfaces 9 (47), 41607-41617, 2017 | 105 | 2017 |
| Atomic layer deposition of Y2O3 and yttrium-doped HfO2 using a newly synthesized Y (iPrCp) 2 (N-iPr-amd) precursor for a high permittivity gate dielectric JS Lee, WH Kim, IK Oh, MK Kim, G Lee, CW Lee, J Park, ... Applied surface science 297, 16-21, 2014 | 69 | 2014 |
| A composite layer of atomic-layer-deposited Al2O3 and graphene for flexible moisture barrier T Nam, YJ Park, H Lee, IK Oh, JH Ahn, SM Cho, H Kim Carbon 116, 553-561, 2017 | 62 | 2017 |
| Bending stability of flexible amorphous IGZO thin film transistors with transparent IZO/Ag/IZO oxide–metal–oxide electrodes YC Kim, SJ Lee, IK Oh, S Seo, H Kim, JM Myoung Journal of Alloys and Compounds 688, 1108-1114, 2016 | 61 | 2016 |
| Highly flexible hybrid CMOS inverter based on Si nanomembrane and molybdenum disulfide T Das, X Chen, H Jang, IK Oh, H Kim, JH Ahn Small 12 (41), 5720-5727, 2016 | 56 | 2016 |
| Catalytic chemical vapor deposition of large-area uniform two-dimensional molybdenum disulfide using sodium chloride JG Song, GH Ryu, Y Kim, WJ Woo, KY Ko, Y Kim, C Lee, IK Oh, J Park, ... Nanotechnology 28 (46), 465103, 2017 | 52 | 2017 |
| Atomic layer deposition of Y-stabilized ZrO2 for advanced DRAM capacitors BE Park, IK Oh, C Mahata, CW Lee, D Thompson, WJ Maeng, H Kim Journal of Alloys and Compounds 722, 307-312, 2017 | 50 | 2017 |
| Nucleation and Growth of the HfO2 Dielectric Layer for Graphene-Based Devices IK Oh, J Tanskanen, H Jung, K Kim, MJ Lee, Z Lee, SK Lee, JH Ahn, ... Chemistry of Materials 27 (17), 5868-5877, 2015 | 49 | 2015 |
| Comparative study of the growth characteristics and electrical properties of atomic-layer-deposited HfO 2 films obtained from metal halide and amide precursors IK Oh, BE Park, S Seo, BC Yeo, J Tanskanen, WH Kim, H Kim Journal of Materials Chemistry C 6 (27), 7367-7376, 2018 | 48 | 2018 |
| Role of precursor choice on area-selective atomic layer deposition IK Oh, TE Sandoval, TL Liu, NE Richey, SF Bent Chemistry of Materials 33 (11), 3926-3935, 2021 | 47 | 2021 |
| Effect of Al2O3 Deposition on Performance of Top-Gated Monolayer MoS2-Based Field Effect Transistor JG Song, SJ Kim, WJ Woo, Y Kim, IK Oh, GH Ryu, Z Lee, JH Lim, J Park, ... ACS applied materials & interfaces 8 (41), 28130-28135, 2016 | 47 | 2016 |
| The effect of La2O3-incorporation in HfO2 dielectrics on Ge substrate by atomic layer deposition I Oh, MK Kim, J Lee, CW Lee, C Lansalot-Matras, W Noh, J Park, A Noori, ... Applied surface science 287, 349-354, 2013 | 44 | 2013 |
| Enhanced Light Stability of InGaZnO Thin-Film Transistors by Atomic-Layer-Deposited Y2O3 with Ozone H Jung, WH Kim, BE Park, WJ Woo, IK Oh, SJ Lee, YC Kim, JM Myoung, ... ACS applied materials & interfaces 10 (2), 2143-2150, 2018 | 43 | 2018 |
| Growth characteristics and electrical properties of SiO2 thin films prepared using plasma-enhanced atomic layer deposition and chemical vapor deposition with an … H Jung, WH Kim, IK Oh, CW Lee, C Lansalot-Matras, SJ Lee, JM Myoung, ... Journal of Materials Science 51, 5082-5091, 2016 | 41 | 2016 |
| Synthesis of a Hybrid Nanostructure of ZnO-Decorated MoS2 by Atomic Layer Deposition IK Oh, WH Kim, L Zeng, J Singh, D Bae, AJM Mackus, JG Song, S Seo, ... ACS nano 14 (2), 1757-1769, 2020 | 31 | 2020 |
Hyungjun KimSchool of Electrical abd Electronic Engineering, Yonsei UniversityVerified email at yonsei.ac.kr
