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Yuqiang Ma
Yuqiang Ma
PhD of Physics, USC
Verified email at usc.edu
Title
Cited by
Cited by
Year
Black Phosphorus Gas Sensors
AN Abbas, B Liu, L Chen, Y Ma, S Cong, N Aroonyadet, M Köpf, ...
ACS nano, 2015
7132015
Chemical Vapor Deposition Growth of Monolayer WSe2 with Tunable Device Characteristics and Growth Mechanism Study
B Liu, M Fathi, L Chen, A Abbas, Y Ma, C Zhou
ACS nano, 2015
4542015
Red phosphorus nanodots on reduced graphene oxide as a flexible and ultra-fast anode for sodium-ion batteries
Y Liu, A Zhang, C Shen, Q Liu, X Cao, Y Ma, L Chen, C Lau, TC Chen, ...
ACS nano 11 (6), 5530-5537, 2017
2302017
Fully Screen-Printed, Large-Area, and Flexible Active-Matrix Electrochromic Displays Using Carbon Nanotube Thin-Film Transistors
X Cao, C Lau, Y Liu, F Wu, H Gui, Q Liu, Y Ma, H Wan, MR Amer, C Zhou
ACS nano 10 (11), 9816-9822, 2016
2242016
Step-Edge-Guided Nucleation and Growth of Aligned WSe2 on Sapphire via a Layer-over-Layer Growth Mode
L Chen, B Liu, M Ge, Y Ma, AN Abbas, C Zhou
ACS nano, 2015
2162015
Reversible Semiconducting-to-Metallic Phase Transition in Chemical Vapor Deposition Grown Monolayer WSe2 and Applications for Devices
Y Ma, B Liu, A Zhang, L Chen, M Fathi, C Shen, A Abbas, M Ge, ...
APS 2016, F17. 012, 2016
2072016
Reversible Semiconducting-to-Metallic Phase Transition in Chemical Vapor Deposition Grown Monolayer WSe2 and Applications for Devices
Y Ma, B Liu, A Zhang, L Chen, M Fathi, C Shen, AN Abbas, M Ge, ...
ACS Nano, 2015
2072015
Screw-Dislocation-Driven Growth of Two-Dimensional Few-Layer and Pyramid-like WSe2 by Sulfur-Assisted Chemical Vapor Deposition
L Chen, B Liu, AN Abbas, Y Ma, X Fang, Y Liu, C Zhou
ACS nano 8 (11), 11543-11551, 2014
1872014
Air-Stable Room-Temperature Mid-Infrared Photodetectors Based on hBN/Black Arsenic Phosphorus/hBN Heterostructures
S Yuan, C Shen, B Deng, X Chen, Q Guo, Y Ma, A Abbas, B Liu, R Haiges, ...
Nano letters 18 (5), 3172-3179, 2018
1732018
High-Performance WSe2 Field-Effect Transistors via Controlled Formation of In-Plane Heterojunctions
B Liu, Y Ma, A Zhang, L Chen, A Abbass, Y Liu, C Shen, H Wan, C Zhou
APS 2018, E36. 010, 2018
1692018
High Performance WSe2 Field-Effect Transistors via Controlled Formation of In-Plane Heterojunctions
B Liu, Y Ma, C Zhou, Tsinghua-Berkeley Shenzhen Institute Collaboration
APS 2017, Y33. 010, 2017
1692017
High-Performance WSe2 Field-Effect Transistors via Controlled Formation of In-Plane Heterojunctions
B Liu, Y Ma, A Zhang, L Chen, AN Abbas, Y Liu, C Shen, H Wan, C Zhou
ACS Nano, 2016
1692016
High Performance WSe2 Field-Effect Transistors via Controlled Formation of In-Plane Heterojunctions
B Liu, Y Ma, A Zhang, L Chen, AN Abbas, Y Liu, C Shen, H Wan, C Zhou
arXiv, 2016
1692016
Hierarchical carbon-coated ball-milled silicon: synthesis and applications in free-standing electrodes and high-voltage full lithium-ion batteries
C Shen, X Fang, M Ge, A Zhang, Y Liu, Y Ma, M Mecklenburg, X Nie, ...
ACS nano 12 (6), 6280-6291, 2018
1092018
Functional interlayer of PVDF-HFP and carbon nanofiber for long-life lithium-sulfur batteries
A Zhang, X Fang, C Shen, Y Liu, IG Seo, Y Ma, L Chen, P Cottingham, ...
Nano Research 11 (6), 3340-3352, 2018
682018
Black Phosphorus Field-Effect Transistors with Work Function Tunable Contacts
Y Ma, C Shen, A Zhang, L Chen, Y Liu, J Chen, Q Liu, Z Li, MR Amer, ...
ACS nano 11 (7), 7126-7133, 2017
632017
Synthesis, Characterization, and Device Application of Antimony-Substituted Violet Phosphorus: A Layered Material
F Baumer, Y Ma, C Shen, A Zhang, L Chen, Y Liu, D Pfister, T Nilges, ...
ACS nano 11 (4), 4105-4113, 2017
442017
High-Performance Sub-Micrometer Channel WSe2 Field-Effect Transistors Prepared Using a Flood–Dike Printing Method
Fanqi Wu, Liang Chen, Anyi Zhang, Yi-Lun Hong, Nai-Yun Shih, Seong-Yong Cho ...
ACS Nano, 2017
92017
TRANSPORT OF SOLAR WIND H+ AND He++ IONS ACROSS EARTH'S BOW SHOCK
G Parks, E Lee, S Fu, H Kim, Y Ma, Z Yang, Y Liu, N Lin, J Hong, P Canu, ...
The Astrophysical Journal Letters, 2016
92016
Anodes for sodium-ion batteries
C Zhou, X Cao, Q Liu, Y Liu, Y Ma, C Shen, L Chen, AY Zhang, ...
US Patent App. 16/418,506, 2019
2019
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