Light emitting diode and method for fabricating the same J Kwak, J Cho US Patent 8,399,944, 2013 | 487 | 2013 |
Light emitting diode and method for fabricating the same J Kwak, J Cho US Patent 8,536,604, 2013 | 453 | 2013 |
Ohmic and degradation mechanisms of Ag contacts on p-type GaN JO Song, JS Kwak, Y Park, TY Seong Applied Physics Letters 86 (6), 2005 | 144 | 2005 |
LED with uniform current spreading and method of fabrication JS Kwak, MJ Park, FA Khaja, CC Chen US Patent 8,502,192, 2013 | 139 | 2013 |
Characteristics of GaN‐based laser diodes for post‐DVD applications OH Nam, KH Ha, JS Kwak, SN Lee, KK Choi, TH Chang, SH Chae, ... physica status solidi (a) 201 (12), 2717-2720, 2004 | 119 | 2004 |
Computational evolutionary optimization of red phosphor for use in tricolor white LEDs KS Sohn, DH Park, SH Cho, JS Kwak, JS Kim Chemistry of Materials 18 (7), 1768-1772, 2006 | 111 | 2006 |
Crystal-polarity dependence of Ti/Al contacts to freestanding n-GaN substrate JS Kwak, KY Lee, JY Han, J Cho, S Chae, OH Nam, Y Park Applied Physics Letters 79 (20), 3254-3256, 2001 | 108 | 2001 |
Low resistance Al/Ti/n-GaN ohmic contacts with improved surface morphology and thermal stability JS Kwak, SE Mohney, JY Lin, RS Kern Semiconductor science and technology 15 (7), 756, 2000 | 92 | 2000 |
Low-resistance and highly-reflective Zn–Ni solid solution/Ag ohmic contacts for flip-chip light-emitting diodes JO Song, DS Leem, JS Kwak, OH Nam, Y Park, TY Seong Applied physics letters 83 (24), 4990-4992, 2003 | 78 | 2003 |
Light-extraction enhancement of vertical-injection GaN-based light-emitting diodes fabricated with highly integrated surface textures H Kim, KK Choi, KK Kim, J Cho, SN Lee, Y Park, JS Kwak, TY Seong Optics letters 33 (11), 1273-1275, 2008 | 76 | 2008 |
Abnormal dependence of contact resistivity on hole concentration in nonalloyed ohmic contacts to JS Kwak, OH Nam, Y Park Applied physics letters 80 (19), 3554-3556, 2002 | 76 | 2002 |
Temperature-dependent contact resistivity of the nonalloyed ohmic contacts to JS Kwak, OH Nam, Y Park Journal of applied physics 95 (10), 5917-5919, 2004 | 75 | 2004 |
Improvement of the luminous intensity of light-emitting diodes by using highly transparent Ag-indium tin oxide p-type ohmic contacts JO Song, DS Leem, JS Kwak, Y Park, SW Chae, TY Seong IEEE Photonics Technology Letters 17 (2), 291-293, 2005 | 71 | 2005 |
Graphite as a Long‐Life Ca2+‐Intercalation Anode and its Implementation for Rocking‐Chair Type Calcium‐Ion Batteries SJ Richard Prabakar, AB Ikhe, WB Park, KC Chung, H Park, KJ Kim, ... Advanced Science 6 (24), 1902129, 2019 | 70 | 2019 |
Low resistance and reflective Mg-doped indium oxide-Ag ohmic contacts for flip-chip light-emitting diodes JO Song, DS Leem, JS Kwak, OH Nam, Y Park, TY Seong IEEE Photonics Technology Letters 16 (6), 1450-1452, 2004 | 69 | 2004 |
Improvement of the light output of InGaN-based light-emitting diodes using Cu-doped indium oxide/indium tin oxide p-type electrodes JO Song, JS Kwak, Y Park, TY Seong Applied Physics Letters 86 (21), 2005 | 68 | 2005 |
GaN based group III-V nitride semiconductor light-emitting diode and method for fabricating the same J Kwak, K Lee, J Cho, S Chae US Patent 6,657,237, 2003 | 67 | 2003 |
Method for fabricating semiconductor light emitting device J Kwak, K Lee US Patent 6,551,848, 2003 | 64 | 2003 |
Electron beam irradiated silver nanowires for a highly transparent heater CH Hong, SK Oh, TK Kim, YJ Cha, JS Kwak, JH Shin, BK Ju, WS Cheong Scientific reports 5 (1), 17716, 2015 | 63 | 2015 |
Cu-doped indium oxide∕ Ag ohmic contacts for high-power flip-chip light-emitting diodes JO Song, JS Kwak, TY Seong Applied Physics Letters 86 (6), 2005 | 62 | 2005 |