| 2D transition metal dichalcogenide heterostructures for p‐and n‐type photovoltaic self‐powered gas sensor Y Kim, S Lee, JG Song, KY Ko, WJ Woo, SW Lee, M Park, H Lee, Z Lee, ... Advanced Functional Materials 30 (43), 2003360, 2020 | 171 | 2020 |
| Low-temperature synthesis of 2D MoS 2 on a plastic substrate for a flexible gas sensor Y Zhao, JG Song, GH Ryu, KY Ko, WJ Woo, Y Kim, D Kim, JH Lim, S Lee, ... Nanoscale 10 (19), 9338-9345, 2018 | 166 | 2018 |
| Recovery improvement for large-area tungsten diselenide gas sensors KY Ko, K Park, S Lee, Y Kim, WJ Woo, D Kim, JG Song, J Park, H Kim ACS applied materials & interfaces 10 (28), 23910-23917, 2018 | 140 | 2018 |
| High-Performance Gas Sensor Using a Large-Area WS2xSe2–2x Alloy for Low-Power Operation Wearable Applications KY Ko, S Lee, K Park, Y Kim, WJ Woo, D Kim, JG Song, J Park, JH Kim, ... ACS applied materials & interfaces 10 (40), 34163-34171, 2018 | 114 | 2018 |
| Self-limiting layer synthesis of transition metal dichalcogenides Y Kim, JG Song, YJ Park, GH Ryu, SJ Lee, JS Kim, PJ Jeon, CW Lee, ... Scientific reports 6 (1), 18754, 2016 | 105 | 2016 |
| Atomic‐Layer‐Deposition‐Based 2D Transition Metal Chalcogenides: Synthesis, Modulation, and Applications Y Kim, WJ Woo, D Kim, S Lee, S Chung, J Park, H Kim Advanced Materials 33 (47), 2005907, 2021 | 79 | 2021 |
| Catalytic chemical vapor deposition of large-area uniform two-dimensional molybdenum disulfide using sodium chloride JG Song, GH Ryu, Y Kim, WJ Woo, KY Ko, Y Kim, C Lee, IK Oh, J Park, ... Nanotechnology 28 (46), 465103, 2017 | 52 | 2017 |
| Effect of Al2O3 Deposition on Performance of Top-Gated Monolayer MoS2-Based Field Effect Transistor JG Song, SJ Kim, WJ Woo, Y Kim, IK Oh, GH Ryu, Z Lee, JH Lim, J Park, ... ACS applied materials & interfaces 8 (41), 28130-28135, 2016 | 47 | 2016 |
| Enhanced Light Stability of InGaZnO Thin-Film Transistors by Atomic-Layer-Deposited Y2O3 with Ozone H Jung, WH Kim, BE Park, WJ Woo, IK Oh, SJ Lee, YC Kim, JM Myoung, ... ACS applied materials & interfaces 10 (2), 2143-2150, 2018 | 43 | 2018 |
| Synthesis of two-dimensional MoS2/graphene heterostructure by atomic layer deposition using MoF6 precursor Y Kim, D Choi, WJ Woo, JB Lee, GH Ryu, JH Lim, S Lee, Z Lee, S Im, ... Applied Surface Science 494, 591-599, 2019 | 30 | 2019 |
| Interface Defect Engineering of a Large‐Scale CVD‐Grown MoS2 Monolayer via Residual Sodium at the SiO2/Si Substrate SW Han, WS Yun, WJ Woo, H Kim, J Park, YH Hwang, TK Nguyen, CT Le, ... Advanced Materials Interfaces 8 (14), 2100428, 2021 | 18 | 2021 |
| Bi-layer high-k dielectrics of Al2O3/ZrO2 to reduce damage to MoS2 channel layers during atomic layer deposition WJ Woo, IK Oh, BE Park, Y Kim, J Park, S Seo, JG Song, H Jung, D Kim, ... 2D Materials 6 (1), 015019, 2018 | 12 | 2018 |
| Reaction Mechanisms of Non-hydrolytic Atomic Layer Deposition of Al2O3 with a Series of Alcohol Oxidants S Seo, WJ Woo, Y Lee, H Yoon, M Kim, IK Oh, SM Chung, H Kim, ... The Journal of Physical Chemistry C 125 (33), 18151-18160, 2021 | 10 | 2021 |
| Method of manufacturing a semiconductor element, organic light emitting display device including a semiconductor element, and method of manufacturing an organic light emitting … S Lee, H Kim, JH Lim, W Woo US Patent App. 15/834,628, 2019 | 8 | 2019 |
| MoS2 doping by atomic layer deposition of high-k dielectrics using alcohol as process oxidants WJ Woo, S Seo, T Nam, Y Kim, D Kim, JG Song, IK Oh, JH Lim, HJ Kim, ... Applied Surface Science 541, 148504, 2021 | 7 | 2021 |
| Effects of TaN diffusion barrier on Cu-gate ZnO: N thin-film transistors WJ Woo, T Nam, H Jung, IK Oh, JG Song, W Maeng, H Kim IEEE Electron Device Letters 37 (5), 599-602, 2016 | 4 | 2016 |
| Highly stable 2D material (2DM) field-effect transistors (FETs) with wafer-scale multidyad encapsulation CK Kim, EG Jeong, E Kim, JG Song, Y Kim, WJ Woo, MK Lee, H Bae, ... Nanotechnology 28 (5), 055203, 2016 | 3 | 2016 |
| High-Performance Ink-Synthesized Cu-Gate Thin-Film Transistor with Diffusion Barrier Formation WJ Woo, T Nam, IK Oh, W Maeng, H Kim Metals and Materials International 24, 652-656, 2018 | 2 | 2018 |
| Method of manufacturing semiconductor element that includes wet etching semiconductor layer that includes crystallized two-dimensional layers JH Lim, H Kim, YJ Kim, JS Park, WJ Woo US Patent 12,022,690, 2024 | 1 | 2024 |
| Self‐Powered Gas Sensors: 2D Transition Metal Dichalcogenide Heterostructures for p‐and n‐Type Photovoltaic Self‐Powered Gas Sensor (Adv. Funct. Mater. 43/2020) Y Kim, S Lee, JG Song, KY Ko, WJ Woo, SW Lee, M Park, H Lee, Z Lee, ... Advanced Functional Materials 30 (43), 2070284, 2020 | 1 | 2020 |
